non-volatile SRAM (NVSRAM)

There are several memory technologies that combine the advantages of static RAM( SRAM) with that of non-volatile memory: Ferro RAM( FRAM), Magneto-resistiveRAM( MRAM), Battery Backup SRAM (BBSRAM), and Non-Volatile SRAM (NVSRAM).

All of these technologies use different processes: Ferro-Electric, Magneto-Resistive, or Backup Battery. NVSRAM, on the other hand, transfers the SRAM content to special non-volatile memory cells integrated in the memory chip in the event of a supply voltage failure.

Non-volatile SRAMs are characterized by an extremely short access time, ranging from 15 ns to 50 ns, and in addition, the memory content can be stored for decades. In contrast, the storage capacities of NVSRAMs are relatively small and have only a few Mbit. NVSRAMs are supplied in space-saving packages, Shrink Small Outline Package( SSOP), Small Outline Integrated Circuit( SOIC) and Thin Small Outline Package( TSOP).