V-NAND flashes are memory chips in which the memory cells are arranged in many vertical layers.
By stacking the chips on top of each other, the memory chips become extremely compact and have a relatively high storage speed due to the short bonds between the individual layers. With this technology, 32- layer 3D memory chips with a storage capacity of 2 terabytes( TB) can be realized.
In V-NAND technology, solid-state drives( SSD) with storage capacities ofpetabytes can be developed on small plug-in cards in the M.2 form factor or in Next Generation Small Form Factor( NGSFF). The data rates achievable with these designs are many times higher with NVM Express than with Serial ATA( SATA).