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tunneling magneto-resistive (TMR)

The TMR (Tunneling Magneto-Resistive) mechanism, a technique used in magnetic field sensors, involves a tunneling effect based on quantum physics. This effect occurs in layered systems with at least two ferromagnetic layers

with an insulating layer in between. The TMR effect can be explained by the fact that in extremely thin structures, on the order of molecules, even the thinnest insulators located between two conducting layers allow electrons to pass through. In tunneling magneto-resistance, a highly thin insulator

is located between two ferromagnetic layers and changes its resistance value with the orientation of the magnetic field.

Properties of the different magneto-resistive techniques

Properties of the different magneto-resistive techniques

The advantage of this technique over the other magneto-resistive techniques, Anisotropic Magnet o-Resistive (AMR) and Giant Magneto-Resistive (GMR), is the extremely small size of TMR sensors, which have edge lengths in the micrometer range.

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Englisch: tunneling magneto-resistive - TMR
Updated at: 28.02.2012
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