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resistive random access memory (RRAM)

Resistive Random Access Memories (RRAM or ReRAM) are non-volatile memories(NVM) based on the resistance change of dielectric materials.

By applying a voltage, the resistivity of these materials can be changed between good and poor conductivity, similar to the function of a memristor. The materials used in RRAMs are metal oxides such as nickel oxide (NiO) or titanium dioxide( TiO2), halides of silver, antimony, tellurium or germanium, or organic substances. The structure of RRAMs can correspond to that of other memory cells, in which the RRAM cells are located between the crossing points of the bit line and the word line.

RRAMs are extremely power-efficient and have shorter switching times than NAND flashes. These are less than 10 ns. Because of their properties, RRAMs are suitable as memory for sensors in industry and automotive technology.

Informations:
Englisch: resistive random access memory - RRAM
Updated at: 26.01.2020
#Words: 134
Links: non-volatile memory (NVM), dielectric, voltage, resistivity, conductivity
Translations: DE
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