RTP technology ensures that implanted dopants are activated or that certain properties of the dopants change, such as their conductivity.
Early in the manufacturing process, semiconductor devices can tolerate extended exposure times of up to 90 seconds at high temperatures. Due to uniform temperature control in the RTP process, the expansion of the entire wafer is also uniform, thus avoiding distortions in the wafer. With the RTP process and the associated isothermal heating, the temperature can be ramped up extremely quickly. The values are many times higher than with classic heating furnaces.