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plasma enhanced chemical vapor deposition (coating) (PECVD)

Plasma Enhanced Chemical Vapor Deposition (PECVD) is a chemical vapor deposition(CVD) process that uses plasma at low temperatures between 250 °C and 350 °C.

In the PECVD process, silicon is deposited and doped from a gas containing silicon. It is deposited on a carrier material. The plasma-enhanced vapor deposition process can also be used in printed circuit boards for materials with a low melting point, such as aluminum, which has a melting point of 500 °C.

Englisch: plasma enhanced chemical vapor deposition (coating) - PECVD
Updated at: 12.03.2021
#Words: 74
Links: chemical vapour deposition (chip design) (CVD), process, plasma, indium (In), silicon (Si)
Translations: DE

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