plasma enhanced chemical vapor deposition (coating) (PECVD)
Plasma Enhanced Chemical Vapor Deposition (PECVD) is a chemical vapor deposition(CVD) process that uses plasma at low temperatures between 250 °C and 350 °C.
In the PECVD process, silicon is deposited and doped from a gas containing silicon. It is deposited on a carrier material. The plasma-enhanced vapor deposition process can also be used in printed circuit boards for materials with a low melting point, such as aluminum, which has a melting point of 500 °C.