- Tech know how online

heterojunction field effect transistor (HFET)

Heterojunction field-effect transistors (HFET) have comparable properties to MESFETs. They are used in microwave technology and in high-speed digital circuits.

HFETs are characterized by the ability to increase electron mobility near the interface between two semiconductors by using different band gaps. In heterojunction field-effect transistors, the channel is formed by the bandgap than by the electron affinity. Due to the extremely short-time rates of change, HFETs are used for switches and low- noise RF amplifiers. As semiconductor material, HFETs use aluminum gallium arsenide( AlGaAs) and gallium arsenide( GaAs).

Englisch: heterojunction field effect transistor - HFET
Updated at: 06.05.2021
#Words: 86
Links: field, microwave (MW), digital, interface (I/F), indium (In)
Translations: DE

All rights reserved DATACOM Buchverlag GmbH © 2024