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equivalent oxide thickness (semiconductor) (EOT)

Semiconductors have a dielectric made of an oxide between the transistor channel and the gate. In order to achieve high switching speeds, such a dielectric should be extremely thin.

#0 The materials for the oxide are high-k dielectrics as soon as their permittivity exceeds the value of 4. In semiconductor technology, the Equivalent Oxide Thickness (EOT) has proven to be a useful comparative measure. The EOT value is a comparative value that indicates how thick a silicon dioxide layer would have to be to have the same dielectric constants as the high-k dielectric.

Englisch: equivalent oxide thickness (semiconductor) - EOT
Updated at: 05.01.2022
#Words: 89
Links: dielectric, channel, indium (In), order, high-k
Translations: DE

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