equivalent oxide thickness (semiconductor) (EOT)

Semiconductors have a dielectric made of an oxide between the transistor channel and the gate. In order to achieve high switching speeds, such a dielectric should be extremely thin.

#0 The materials for the oxide are high-k dielectrics as soon as their permittivity exceeds the value of 4. In semiconductor technology, the Equivalent Oxide Thickness (EOT) has proven to be a useful comparative measure. The EOT value is a comparative value that indicates how thick a silicon dioxide layer would have to be to have the same dielectric constants as the high-k dielectric.