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enhanced dynamic random access memory (eDRAM)

Enhanced Dynamic Random Access Memory (eDRAM) is a dynamic RAM (DRAM) that combines a small static RAM (SRAM) with a larger dynamic RAM (DRAM).

Developed by NEC, eDRAM has the advantage that access via SRAM is faster than that via DRAM. Accordingly, the access times are 15 ns when accessing the SRAM and 35 ns when accessing the DRAM. eDRAMs are used in caches, and are characterized by a higher density compared to SRAMs, and therefore require a smaller area on the chip. eDRAMs operate at clock rates of 450 MHz and an operating voltage of 1.2 V.

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Englisch: enhanced dynamic random access memory - eDRAM
Updated at: 10.10.2012
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Translations: DE