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carrier stored trench-gate bipolar transistor (CSTBT)

Since the introduction of Insulated Gate Bipolar Transistors (IGBT), they have undergone continuous development, becoming more compact and powerful.

The Carrier Stored Trench-Gate Bipolar Transistor (CSTBT) is such a further development, which has already adopted certain layers of the Trench-IGBT (TIGBT).

Compared to the IGBT, the CSTBT has an additional n-doped layer with a relatively high impurity inserted between the p-layer and the n-layer. This layer acts like a trench and its purpose is to increase the stresses at the layer junctions. It represents a high hurdle for the hole migrations.

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Englisch: carrier stored trench-gate bipolar transistor - CSTBT
Updated at: 03.04.2008
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Translations: DE