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X-magneto-resistive (XMR)

There are various methods with which the resistance value of conductive materials can be influenced under the influence of a magnetic field. These effects, known as magneto-resistive effects, and the methods developed from them are grouped under the generic term X-magneto-resistive (XMR) and are used in magnetic field sensors and magnetometers.

The magneto-resistive methods differ essentially in the resistance behaviour of a wide variety of materials when magnetically fluxed. These can be ferromagnetic materials, semiconductor materials or extremely thin material structures that change their properties when exposed to magnetic flux.

Properties of the various magneto-resistive processes

Properties of the various magneto-resistive processes

There are various physical effects that cause the change in resistance. The Hall effect is one of the better known magneto-resistive effects, which is implemented in many sensors. Some other effects have been used to develop products, as evidenced by the GMR sensor used in hard drives, which increases storage density by over 20%. Other effects are the Anisotropic Magneto-Resistive (AMR), Colossal Magnet o-Resistive (CMR), Tunneling Magnet o-Resistive (TMR) and the Extraordinary Magneto-Resistive (EMR).

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Englisch: X-magneto-resistive - XMR
Updated at: 28.02.2012
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